Growth and Characterization of Aluminum Indium Nitride Thin Films Grown by Plasma Source Molecular Beam Epitaxy

Growth and Characterization of Aluminum Indium Nitride Thin Films Grown by Plasma Source Molecular Beam Epitaxy

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The plasma source molecular beam epitaxy (PSMBE) deposition parameters for the growth of the AlxIn1-xN alloy system were developed. Epitaxial AlxIn1-xN thin films with 0 a‰c x a‰c 1 were grown by PSMBE on Sapphire (0001) substrates at the low temperature of 375AdC. Both RHEED and XRD measurements confirm the c-plane growth and were used to determine the epitaxial relationship between III-nitride and the Sapphire substrate. Atomic Force Microscopy showed the surface roughness to increase with increasing Indium concentration. XRD also showed that the degree of crystalline mosaic character and compositional fluctuation increased with increasing Indium concentration. The direct band gap energy, determined using optical (UV-VIS) transmission and reflection measurements, these results exhibited less bowing compared to some earlier studies. Preliminary electrical resistivity and Hall effect measurements have been made and show these alloys have n-type electrical conductivity.[X] The format of your dissertation/thesis manuscript has not been approved for the following reason(s): a–i Title page (See sample pages in the Format Guide) Title should be single spaced, in CAPS a–i Candidatea#39;s name in CAPS a–i aquot; Submitted to Graduate School. ... December) [X] August 2006 [x] Autobiographical Statement must be only one page (single spaced if necessary) Cannot exceed one page.


Title:Growth and Characterization of Aluminum Indium Nitride Thin Films Grown by Plasma Source Molecular Beam Epitaxy
Author: Michael John Lukitsch
Publisher:ProQuest - 2007
ISBN-13:

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